作者: Yingying Li , Yan Li , Wei Xiao
DOI: 10.1016/J.NET.2018.12.010
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摘要: Abstract The tensile strength of irradiated 3C-SiC, SiC with artificial point defects, symmetric tilt grain boundaries (GBs), GBs are investigated using molecular dynamics simulations at 300 K. For an sample, the decreases increase irradiation dose. Young's modulus dose which agrees well experiment and simulation data. designed defects dramatically decrease low concentration. Among studied in this work, vacancies drop most seriously. pure SiC. Under condition, strengths all samples converge to certain value because structures become amorphous disappear after high irradiation.