Electrochromic properties of SnO2-incorporated Ni oxide films grown using a cosputtering system
作者： Kwang-Soon Ahn , Yoon-Chae Nah , Yung-Eun Sung
DOI: 10.1063/1.1521519
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摘要: SnO2-incorporated Ni oxide (NiO:SnO2) films were grown by means of a cosputtering system, consisting two rf sputter guns, and their electrochromic properties compared with those film. The crystallized an increased film thickness due to plasma heating effect, leading decreased maximum bleached transmittance coloration efficiency (CE). However, the NiO:SnO2 showed acceptable CE values, which independent thickness. This indicates that SnO2 adatoms generated side gun interfere movement deposited main gun, preventing crystallization films. was verified x-ray diffraction scanning electron microscopic data. We propose technique described herein has capability providing good in thick no degradation t...
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