Self-aligned carbon nanotube transistors with charge transfer doping
作者： Jia Chen , Christian Klinke , Ali Afzali , Phaedon Avouris
DOI: 10.1063/1.1888054
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摘要: This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with self-aligned gate structure. doping allows one improve carrier injection, tune the threshold voltage Vth, and enhance device performance in both “ON-” “OFF-” transistor states. Specifically, is converted from ambipolar unipolar, drive current increased by 2–3 orders of magnitude, OFF suppressed an excellent Ion∕Ioff ratio 106 obtained. The important role played metal–nanotube contacts modification through demonstrated.
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