摘要: Publisher Summary This chapter discusses the defects in zinc oxide (ZnO). ZnO is a wide bandgap semiconductor material with numerous present applications, such as varistors and surface acoustic wave devices, future including UV light-emitting diodes transparent field-effect transistors. However, all of these applications are either dependent upon, or affected by, impurities defects. It considers donor-type H, Al, Ga, In; acceptor-type N, P, As, Sb. Among defects, it concentrates on Zn interstitials, vacancies, O complexes each. The main experimental techniques discussed include temperature-dependent Hall-effect low-temperature photoluminescence measurements, because they can alone provide donor acceptor concentrations, energies. Surface conduction important analysis annealed samples, included by means two-layer analysis. topic p-type considered some detail, especially connection most useful dopants.
sci-hub.se 参考文章(89)
Jingyun Huang, Zhizhen Ye, Hanhong Chen, Binghui Zhao, Lei Wang, Growth of N-doped p-type ZnO films using ammonia as dopant source gas Journal of Materials Science Letters. ,vol. 22, pp. 249- 251 ,(2003) , 10.1023/A:1022347910122
Veeramuthu Vaithianathan, Byung-Teak Lee, Sang Sub Kim, Preparation of As-doped p-type ZnO films using a Zn3As2∕ZnO target with pulsed laser deposition Applied Physics Letters. ,vol. 86, pp. 062101- ,(2005) , 10.1063/1.1854748
Chris G. Van de Walle, Hydrogen as a cause of doping in zinc oxide Physical Review Letters. ,vol. 85, pp. 1012- 1015 ,(2000) , 10.1103/PHYSREVLETT.85.1012
A. V. Singh, R. M. Mehra, A. Wakahara, A. Yoshida, p-type conduction in codoped ZnO thin films Journal of Applied Physics. ,vol. 93, pp. 396- 399 ,(2003) , 10.1063/1.1527210
J LU, p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations Materials Letters. ,vol. 57, pp. 3311- 3314 ,(2003) , 10.1016/S0167-577X(03)00054-5
O.F. Schirmer, D. Zwingel, The yellow luminescence of zinc oxide Solid State Communications. ,vol. 8, pp. 1559- 1563 ,(1970) , 10.1016/0038-1098(70)90608-3
Sang Yeol Lee, Eun Sub Shim, Hong Seong Kang, Seong Sik Pang, Jeong Seok Kang, Fabrication of ZnO thin film diode using laser annealing Thin Solid Films. ,vol. 473, pp. 31- 34 ,(2005) , 10.1016/J.TSF.2004.06.194
T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, M. Kawasaki, Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga Applied Physics Letters. ,vol. 85, pp. 759- 761 ,(2004) , 10.1063/1.1776630
T V Butkhuzi, M M Sharvashidze, N M Gamkrelidze, Kh V Gelovani, T G Khulordava, N P Kekelidze, E E Kekelidze, The regulation of defect concentrations by means of separation layer in wide-band II-VI compounds Semiconductor Science and Technology. ,vol. 16, pp. 575- 580 ,(2001) , 10.1088/0268-1242/16/7/308
D. C. Look, R. L. Jones, J. R. Sizelove, N. Y. Garces, N. C. Giles, L. E. Halliburton, The Path To ZnO Devices: Donor and Acceptor Dynamics Physica Status Solidi (a). ,vol. 195, pp. 171- 177 ,(2003) , 10.1002/PSSA.200306274