Orientation relationships in heteroepitaxial aluminum films on sapphire

摘要: Abstract We investigate the microstructure and orientation relationships observed in aluminum thin films deposited epitaxially on sapphire (0001). The consist of grains with three distinct types relative to substrate. primary is such that (0001)Al2O3‖(111)Al [10 1 0] Al2O3‖ [ 10] Al. This configuration, which matches close-packed planes directions metal film those oxygen ion sublattice substrate, allows for growth two symmetrically equivalent variants resulting a composed interlocking regions these domains. Unexpectedly, additional are identified films. As variant, {111} remain parallel basal planes. However, orientations rotated about [111] axis Al2O3 near either 2 ] Al (30° rotation) or [5 4 (∼11° rotation).