Methods of manufacturing nonvolatile memory devices
作者： Jong-Hyuk Kang , Daelok Bae , Pil-Kyu Kang , Yong-Hoon Son , Jongwook Lee
DOI:
关键词:
摘要: Nonvolatile memory devices and methods of manufacturing nonvolatile are provided. The method includes patterning a bulk substrate to form an active pillar; forming charge storage layer on side surface plurality gates connected the pillar, being disposed between pillar gates. Before depositing gate, is etched using dry etching vertical which in single body with semiconductor substrate.
lens.org 参考文章(5)
Juri Kato, Nonvolatile semiconductor memory device and manufacturing method thereof ,(2006)
Hiroshi Sakuraba, Fumiyoshi Matsuoka, Syounosuke Ueno, Fujio Masuoka, Memory cell unit, nonvolatile semiconductor device, and liquid crystal display device including the nonvolatile semiconductor device ,(2004)
Masaaki Higashitani, Takashi Orimoto, Tuan Pham, James Kai, George Matamis, Integrated non-volatile memory and peripheral circuitry fabrication ,(2008)
HongSik Yoon, Semiconductor devices having L-shaped cell blocks ,(2009)
Nomoto Kazumasa, Kobayashi Toshio, Nakamura Akihiro, Fujiwara Ichiro, Terano Toshio, Semiconductor device and method of producing the same ,(2005)