作者: Dong-Kyun Ko , Patrick R. Brown , Moungi G. Bawendi , Vladimir Bulović
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摘要: A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both front and back junctions. Due to a combination of improved charged extraction light absorption, 120% increase in short-circuit current achieved compared that conventional ZnO/QD devices.