ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON
作者： B. L. Crowder , R. S. Title , M. H. Brodsky , G. D. Pettit
DOI: 10.1063/1.1653163
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摘要: The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation Si, P, or As at room temperature are found to be identical those the electron states observed amorphous films prepared rf sputtering. Interference phenomena optical absorption spectra allow a determination depth has energetic heavy ions. These two techniques together provide new tool for investigating lattice disorder ion‐implanted layers.
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