Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure

摘要: In this work we demonstrate by photoluminescence studies white light emission from a monolithic InGaN/GaN single quantum well structure grown metal organic chemical vapour deposition. As-grown and thermally annealed samples at high temperature (1000 °C, 1100 °C 1200 °C) pressure (1.1 GPa) were analysed spectroscopic techniques the annealing effect on is deeply explored. Under laser excitation of 3.8 eV room temperature, as-grown exhibits two main bands: yellow band peaked 2.14 eV blue 2.8 eV resulting in perception. Interestingly, stability preserved after lowest (1000 °C), but suppressed for higher temperatures due to deterioration emission. Moreover, control yellow/blue bands intensity ratio, responsible colour coordinate temperatures, could be achieved 1000 °C. The studied as function incident power density correlated values are found warm range: 3260–4000 K.