Phase separation in InGaN grown by metalorganic chemical vapor deposition
作者： N. A. El-Masry , E. L. Piner , S. X. Liu , S. M. Bedair
DOI: 10.1063/1.120639
关键词:
摘要: … in thick InGaN films with up to 50% InN grown by metalorganic chemical vapor deposition from 690 to 780 C. InGaN films … Single phase InGaN was obtained for the as-grown films with …
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