Magnetic Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/Inp with Strong Disorder
作者： B. Pödör , G. Kovács , G. Reményi , I. G. Savel’ev , G. Kiss
DOI: 10.1007/978-94-011-4158-1_6
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摘要: Here we report on the results of our study properties magnetic field-induced insulating phase in a two-dimensional electron gas InGaAs/InP heterostructures. These structures are characterised by much greater disorder potential than AlGaAs/GaAs heterostructures due to inherent alloy InGaAs layer. At millikelvin temperatures, below Landau level filling factor 0.35–0.45, signs (Wigner solid?) were seen this system with large disorder: divergent resistivity, nonlinear current-voltage characteristics threshold, and transition from non-activated activated transport observed. A model is proposed for ordering electrons spite strong disorder.
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