Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation
作者： Diego Alfaro Robayo , Gilbert Sassine , Quentin Rafhay , Gerard Ghibaudo , Gabriel Molas
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摘要: Endurance reliability at the array level of resistive random access memories (RRAMs) is addressed. Both oxide based RAM and conductive bridge stacks are extensively characterized, presenting various measurements over layers, memory stacks, programming conditions. These measurement results allow to extract maximum number cycles before breakdown $\text {N}_{c\,\text {max}}$ . It found that this quantity follows a log-normal law. According first significant result, impact SET RESET conditions on statistics studied. Using tailored ramp voltage stress (RVS) measurements, minimum RRAM switching extracted along endurance then correlated with degradation. To explain better understand all these experimental results, stochastic model defect generation in constriction zone layer during cycling proposed. After exploration size, geometry, shape such zone, as well different probability laws governing breakdown, modeled distributions fitting ones successfully generated deeper explanations about origin variability inferred.
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