Preparation and optical absorption of InSb microcrystallites embedded in SiO2 thin films

摘要: Abstract Semiconductor InSb microcrystallites embedded in SiO2 thin films were prepared by the radio-frequency cosputtering technique. The structures of characterized transmission electron microscopy, X-ray diffraction and photoelectron spectroscopy. average size microcrystallites, depending on post-annealing temperature time, is order a nanometer. absorption spectra measured large blue shifts edge observed wide range from ultraviolet to infrared spectral regime. attributed strong quantum confinement effect explained qualitatively terms effective-mass approximation. A discrepancy between theory our experimental results was found discussed, particularly considering change effective mass exciton microcrystallites.