Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode.

摘要: In recent years, MoS2 has emerged as a prime material for photodetector well phototransistor applications. Usually, the higher density of state and relatively narrow bandgap multi-layer give it an edge over monolayer However, demonstrates thickness-dependent energy properties, with having indirect characteristics therefore possess inferior optical properties. Herein, we investigate electrical properties single-layer MoS2-based phototransistors demonstrate improved through use see-through metal electrode instead traditional global bottom gate or patterned local structures. The utilized in this study shows transmittance more than 70% under 532 nm visible light, thereby allowing incident light to reach entire active area below source drain electrodes. effect contact electrodes on was investigated further by comparing proposed conventional opaque transparent IZO A position-dependent photocurrent measurement also carried out locally illuminating channel at different positions order gain better insight into behavior mechanism metal. It observed that electrons are injected from when beam is placed side due reduced barrier height, giving rise significant enhancement photocurrent.