Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface
作者： Xiang Liu , Xiaoxia Yang , Mingju Liu , Zhi Tao , Qing Dai
DOI: 10.1063/1.4868978
关键词:
摘要: … Compared with the only AOS based phototransistor, the quantum-dots-oxide (QDO) device has broader waveband sensitivity from deep-UV to visible light (585 nm), higher photocurrent …
scitation.org
harvard.edu
osti.gov
aip.org 
sci-hub.se 参考文章(32)
Lubomir Spanhel, Horst Weller, Arnim Henglein, Photochemistry of semiconductor colloids. 22. Electron ejection from illuminated cadmium sulfide into attached titanium and zinc oxide particles Journal of the American Chemical Society. ,vol. 109, pp. 6632- 6635 ,(1987) , 10.1021/JA00256A012
Chien-Hung Wu, Kow-Ming Chang, Sung-Hung Huang, I-Chung Deng, Chin-Jyi Wu, Wei-Han Chiang, Chia-Chiang Chang, Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric IEEE Electron Device Letters. ,vol. 33, pp. 552- 554 ,(2012) , 10.1109/LED.2012.2185774
Shinae Jun, Junho Lee, Eunjoo Jang, Highly luminescent and photostable quantum dot-silica monolith and its application to light-emitting diodes ACS Nano. ,vol. 7, pp. 1472- 1477 ,(2013) , 10.1021/NN3052428
H. S. Bae, C. M. Choi, Jae Hoon Kim, Seongil Im, Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent NiOx electrodes and an n‐ZnO channel Journal of Applied Physics. ,vol. 97, pp. 076104- ,(2005) , 10.1063/1.1855390
Sanghun Jeon, Seung-Eon Ahn, Ihun Song, Chang Jung Kim, U-In Chung, Eunha Lee, Inkyung Yoo, Arokia Nathan, Sungsik Lee, Khashayar Ghaffarzadeh, John Robertson, Kinam Kim, Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays Nature Materials. ,vol. 11, pp. 301- 305 ,(2012) , 10.1038/NMAT3256
Zhenqing Dai, Liangming Wei, Dong Xu, Yafei Zhang, Ultraviolet photoresponse of ZnO nanowire thin-film transistors Physica E-low-dimensional Systems & Nanostructures. ,vol. 44, pp. 1999- 2004 ,(2012) , 10.1016/J.PHYSE.2012.05.033
Khashayar Ghaffarzadeh, Arokia Nathan, John Robertson, Sangwook Kim, Sanghun Jeon, Changjung Kim, U-In Chung, Je-Hun Lee, Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress Applied Physics Letters. ,vol. 97, pp. 113504- ,(2010) , 10.1063/1.3480547
Wan Ki Bae, Jeonghun Kwak, Jaehoon Lim, Donggu Lee, Min Ki Nam, Kookheon Char, Changhee Lee, Seonghoon Lee, Multicolored Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films Using Layer-by-Layer Assembly Method Nano Letters. ,vol. 10, pp. 2368- 2373 ,(2010) , 10.1021/NL100168S
E. Fortunato, P. Barquinha, R. Martins, Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances Advanced Materials. ,vol. 24, pp. 2945- 2986 ,(2012) , 10.1002/ADMA.201103228
Alexander V. Klekachev, Sergey N. Kuznetsov, Inge Asselberghs, Mirco Cantoro, Jeong Hun Mun, Byung Jin Cho, André L. Stesmans, Marc M. Heyns, Stefan De Gendt, Graphene as anode electrode for colloidal quantum dots based light emitting diodes Applied Physics Letters. ,vol. 103, pp. 043124- ,(2013) , 10.1063/1.4816745