Ga1-xInxSb - MOVPE growth and thermodynamic model
作者： J Kosíková , J Leitner , J Pangrác , K Melichar , K Jurek
DOI: 10.1088/0268-1242/16/9/304
关键词:
摘要: The aim of this paper was to prepare good-quality Ga1-xInxSb ternary layers using MOVPE growth. quality the layer surfaces inspected by atomic force microscopy. experimental results obtained were compared with calculated deposition diagrams. composition grown determined x-ray microanalysis. Dependence solid-phase on gaseous-phase in system bases thermodynamic model. It is well known that chemical thermodynamics a very useful tool modelling and optimization CVD processes number studies dealing AIIIBV semiconductors has been published literature (for example, Jordan A S 1995 J. Electron. Mater. 24 1649, Li J, Zhang W, Li C Du Z 1999 Cryst. Growth 207 20, Koukitu A, Kumagai Y Seki H 2000 Phys. Status Solidi/ 180 115 Lu D C Duan S 208 73). On basis concept local equilibrium between growing gaseous phase close vicinity it possible identify stable condensed phases predict their composition.
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