Improved ionic conductivity in strained yttria-stabilized zirconia thin films
作者： Jun Jiang , Xiaocao Hu , Weida Shen , Chaoying Ni , Joshua L. Hertz
DOI: 10.1063/1.4801649
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摘要: Yttria-stabilized zirconia (YSZ) thin films with thickness ranging from 6 nm to 100 nm were prepared by RF sputtering on (0001) Al2O3 substrates and exhibited epitaxial growth along (111)[110] YSZ//(0001)[101¯0] Al2O3. While the thicker oxygen ion conductivities similar bulk samples, thinnest increased ionic conductivity a reduced activation energy of 0.79 eV between 300 °C–650 °C. Concomitant improved thinner is an increase in out-of-plane lattice parameter, matching theoretical expectations regarding tensile strain, introduction edge dislocations, which may additionally assist in-plane conduction.
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