First-principles calculations of the band gap and optical properties of germanium sulfide

作者: L. Makinistian , E. A. Albanesi

DOI: 10.1103/PHYSREVB.74.045206

关键词:

摘要: There are controversial results among the available experimental data of germanium sulfide band gap, as well between these and theoretical model-based calculations published to date. To elucidate this situation, we performed an ab initio calculation its electronic structure adopting local density generalized gradient approximations for exchange-correlation potential. In addition, were carried out with without inclusion spin-orbit interaction. The main difference our previous is that found several critical points in valence conduction bands compete defining gap. This explains diversity existent results, which also a consequence strong crystal anisotropy. Also, suggest important role $s\text{\ensuremath{-}}\mathrm{Ge}$ states contribution at edge band. Based on structure, discuss core spectra optical properties sulfide. We excellent agreement data. Furthermore, calculated functions $\mathrm{GeS}$ satisfactorily compared against existing they explain origin transitions.

参考文章(49)
J. Ghijsen, R. Caudano, Ph. Lambin, Li-Ming Yu, A. Degiovanni, P. A. Thiry, Infrared optical constants of orthorhombic IV-VI lamellar semiconductors refined by a combined study using optical and electronic spectroscopies Physical Review B. ,vol. 47, pp. 16222- 16228 ,(1993) , 10.1103/PHYSREVB.47.16222
J.D. Wiley, A. Breitschwerdt, E. Schönherr, Optical absorption band edge in single-crystal GeS Solid State Communications. ,vol. 17, pp. 355- 359 ,(1975) , 10.1016/0038-1098(75)90311-7
John P. Perdew, Kieron Burke, Matthias Ernzerhof, Generalized Gradient Approximation Made Simple Physical Review Letters. ,vol. 77, pp. 3865- 3868 ,(1996) , 10.1103/PHYSREVLETT.77.3865
P. Blaha, K. Schwarz, P. Sorantin, S.B. Trickey, Full-potential, linearized augmented plane wave programs for crystalline systems Computer Physics Communications. ,vol. 59, pp. 399- 415 ,(1990) , 10.1016/0010-4655(90)90187-6
Peter E. Blöchl, O. Jepsen, O. K. Andersen, Improved tetrahedron method for Brillouin-zone integrations Physical Review B. ,vol. 49, pp. 16223- 16233 ,(1994) , 10.1103/PHYSREVB.49.16223
Su-Huai Wei, Alex Zunger, Electronic and structural anomalies in lead chalcogenides Physical Review B. ,vol. 55, pp. 13605- 13610 ,(1997) , 10.1103/PHYSREVB.55.13605
Th Schwarzl, W Heiß, G Kocher-Oberlehner, G Springholz, plasma etching of IV-VI semiconductor nanostructures Semiconductor Science and Technology. ,vol. 14, ,(1999) , 10.1088/0268-1242/14/2/003
L. F. Mattheiss, D. R. Hamann, Linear augmented-plane-wave calculation of the structural properties of bulk Cr, Mo, and W Physical Review B. ,vol. 33, pp. 823- 840 ,(1986) , 10.1103/PHYSREVB.33.823
John P. Perdew, J. A. Chevary, S. H. Vosko, Koblar A. Jackson, Mark R. Pederson, D. J. Singh, Carlos Fiolhais, Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation. Physical Review B. ,vol. 46, pp. 6671- 6687 ,(1992) , 10.1103/PHYSREVB.46.6671
R. A. Süleymanov, Ş. Ellialtíoǧlu, B. G. Akínoǧlu, Layered semiconductor GeS as a birefringent stratified medium. Physical Review B. ,vol. 52, pp. 7806- 7809 ,(1995) , 10.1103/PHYSREVB.52.7806