Laser plasma source for extreme ultraviolet lithography using a water droplet target

摘要: A laser produced extreme ultraviolet (EUV) source based on a water droplet target has been implemented an auxiliary electrode system between the and first collector mirror. The creates repeller electric field, possibly dc voltage imposed mirror that slows down reverses trajectories of ions from before they impact collection modified according to invention was evaluated with respect demands EUV lithography found have much extended operational lifetimes. spectral distribution generated radiation as well conversion efficiency into line at 13 nm determined. Long time measurements reflectivity silicon/molybdenum multilayer mirrors for up 107 109 shots show useful influence treatment emitted source. Several methods debris reduction were tested discussed. Surface analysis treated is presented. advantage provided by this invention.