The fabrication of large-area, free-standing GaN by a novel nanoetching process
作者： Yu Zhang , Qian Sun , Benjamin Leung , John Simon , Minjoo Larry Lee
DOI: 10.1088/0957-4484/22/4/045603
关键词:
摘要: A simple yet versatile nanoetching process in porosifying and 'machining' GaN is reported this work. By combining different conditions through potentiostatic modulation or embedding doping design, we are able to separate lift off layers over a macroscopic area (≥cm(2)). Strain relaxation single crystallinity confirmed by Raman transmission electron microscopy, respectively. This method expected open up new dimension epitaxy, design manufacture of heterostructures devices.
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