摘要: Rare earth (R) iron garnets (R3Fe5O12) have excellent properties for magnetic, magneto-optic and microwave applications. For magnetic bubble memory devices requiring single crystal films of several micrometer thickness an epitaxial technique had to be developed. The know-how concerning congruently melting non-magnetic garnet growth from the melt laser applications was used grow gallium gadolinium as suitable substrate crystals. On wafers these crystals layers can grown by liquid phase epitaxy (LPE) very diluted high temperature solutions known flux yttrium (YIG) Substrate with structure having a lattice constant in range 1.22 nm 1.26 are now available [1]. This allows wide variety compositions tailor various LPE is well suited process study phenomena, too. Some advantageous features respect will discussed. Occasionally comparison semiconductors made.