Auger effect in semiconductors

摘要: This paper presents a calculation of the lifetimes (τ) excess electrons and holes in semiconductor aaanming Auger effect between bands (electron-electron hole-hole collisions) to be only recombination mechanism. If pair annihilation, corresponding reverse process creation, are counted separately, there four classes processes considered. The suitably weighted algebraic sum rates these yields net rate R . N non-equilibrium number pairs, then τ = N/R In traps is neglected, group conduction band valence each assumed equilibrium among themselves, but not with other, by use quasi-Fermi levels. Bloch functions ψk u(k, r) exp (ik.r) used. matrix element Coulomb interaction obtained as multiple over reciprocal lattice vectors. Most terms correspond Umklapp-type whose probability occurrence shown small. dominant term, after integration all initial final states, dependence lifetime on temperature, carrier concentration, energy gap other parameters. absolute value depends also an overlap intergral form S u *(k, u(k9, dr where k, k9 different bands. integral estimated basis one-dimensional model. theory compared experimental InSb, shows that mechanism envisaged may dominate radiative above 240 °K accounts for order magnitude observed (~ 10 -8 s) neighbourhood highest temperature (330 °K) at which InSb has so far been studied.