作者: J. Martin , S. Erickson , G. S. Nolas , P. Alboni , T. M. Tritt
DOI: 10.1063/1.2171775
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摘要: We report on the structural, chemical, electrical resistivity, Seebeck coefficient, thermal conductivity, and Hall measurements of polycrystalline Si–Ge type-I clathrates with nominal composition Ba8Ga16SixGe30−x such that a constant Ga-to-group-IV element ratio is maintained while varying Si-to-Ge ratio. Electrical transport n-type specimens show modest increase in absolute coefficient decrease resistivity increasing Si content. This may imply modification band structure substitution reveals possible approach for optimizing these materials thermoelectric applications. These data are compared those Ba8Ga16Ge30 Sr8Ga16SixGe30−x.