3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

摘要: 3C-SiC MOSFET with 200 cm2/Vs channel mobility was fabricated. High performance device processes were adopted, including room temperature implantation resist mask, polysilicon-metal gates, aluminium interconnects titanium and nitride a specially developed activation anneal at 1600°C in Ar to get smooth surface hence the expected high mobility. CVD deposited oxide post oxidation annealing investigated reduce unwanted charges better gate integrity compared thermally grown oxides. MOSFETs 600 V blocking voltage 10 A drain current fabricated using improved described above. The assembled TO-220 PKG indicated specific on-resistances of 5 7 mΩcm2.