Tunnel injection into the confined‐particle states of an In1−xGaxP1−zAszwell in InP
作者： E. A. Rezek , N. Holonyak , B. A. Vojak , H. Shichijo
DOI: 10.1063/1.89518
关键词:
摘要: Tunnel injection is demonstrated into the confined‐particle states of an In1−xGaxP1−zAsz potential well, located on p‐type side InP p‐n junction, leading to structure in I‐V, dI/dV, and d2I/dV2 characteristics step increases intensity recombination radiation at bias voltages V corresponding well [eV∼Eg(InGaPAs) ∼hν
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