The total dose effect of γ-ray induced domain evolution on α-In2Se3 nanoflakes.

摘要: Two-dimensional ferroelectric materials can maintain stable polarization with atomic layer thickness, and they have a wide range of technological applications in transistors, resistive memories, energy collectors other multi-functional sensors for highly integrated flexible electronics. Domain evolution should be considered when 2d material-based devices are applied radiation environment, which may induce damage performance degradation. In this work, we investigate the domain photodetection degradation α-In2Se3 nanoflakes induced by total dose effect 60Co γ-rays. The phonon modes change an increase dose, while structure changes based transistors. one main reasons photoresponsivity these This investigation provide solid base future research, immediate contemplated.