Dislocations and impurity boundaries in zing crystals grown from the melt

作者: V.V Damiano , G.S Tint

DOI: 10.1016/0001-6160(61)90067-0

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摘要: Abstract The distribution of etch pits at microsegregations produced by constitutional supercooling was investigated using progressive polishing and etching techniques. Crystals which exhibit an elongated cellular segregation structure commonly called “corrugation” have associated with them rows pits. density pits, their rearrangement into walls formation networks behind the interface suggests that reveal ends decorated dislocations introduced boundaries to accommodate lattice strain. Networks form when are set free as homogenization occurs solid-liquid interface. then become arranged perpendicular {0001}. This secondary substructure fully developed 3 mm increases in size crystal continues grow climb glide agreement predictions made Tiller(1).

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