Magnetic field sensor utilizing anomalous hall effect magnetic film
作者： Hiromasa Takahashi
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摘要: A magnetic field sensor for sensing an applied by utilizing a Hall effect. Used, as portion, are compound materials such FeN showing significant anomalous effect, and containing properties semiconductor having zincblende structure oxide perovskite structure. device of the is adopted, in which providing current terminal to film voltage thereof respectively thickness direction in-plane direction, can be guided into direction.
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