作者: Moinuddin Ahmed , Donald P. Butler , Zeynep Celik-Butler
DOI: 10.1109/ICNF.2011.5994287
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摘要: This paper presents the flicker noise or 1/f-noise measurement of RF sputtered amorphous silicon temperature sensors. The sensor was fabricated between a polyimide substrate and superstrate to place it on zero stress plane. effects voltage dependence power spectral density were evaluated. average value coefficient normalized Hooge parameter K 1/f found be 1.2×10−11.