Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer
作者： Z. M. Zeng , P. Khalili Amiri , J. A. Katine , J. Langer , K. L. Wang
DOI: 10.1063/1.4744914
关键词:
摘要: A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing interfacial perpendicular anisotropy. We show that the response depends critically on thickness of since its anisotropy significantly associated thickness. The optimized sensors exhibit large field sensitivity up to 0.02% MR/Oe high range 600 Oe. These findings imply this scheme promising method for developing simple design, sensitivity, low power consumption.
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