作者: Michael Scarpulla , KM Yu , W Walukiewicz , W Shan , J Wu
DOI: 10.1063/1.1713021
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摘要: We have synthesized ternary and quaternary diluted II-VI oxides using the combination of O ion implantation pulsed laser melting. CdO{sub x}Te{sub 1-x} thin films with x up to 0.015, energy gap reduced by 150 meV were formed O{sup +}-implantation in CdTe followed Quaternary Cd{sub 0.6}Mn{sub 0.4}O{sub Zn{sub 0.88}Mn{sub 0.12}O{sub mole fraction incorporated as high 0.03 also formed. The enhanced incorporation Mn-containing alloys is believed be due formation relatively strong Mn-O bonds. Optical transitions associated lower (E{sub -}) upper +}) conduction subbands resulting from anticrossing interaction between localized states extended host are clearly observed these oxides. These fulfill criteria for a multiband semiconductor that has been proposed material making efficiency, single-junction solar cells.