Doped semiconductor nanocrystal junctions

摘要: Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate formed from highly doped (ND≈1020−1021cm−3) silicon nanocrystals (NCs) in 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that transfer NCs towards a two-dimensional layer experimentally follows simple phenomenological law, corresponding to formation an interface dipole linearly increasing NC diameter. This feature leads analytically predictable junction properties down quantum regimes: depletion width independent varying as ND−1/3, depleted diameter ND1/3. thus establish “nanocrystal counterpart” conventional semiconductor planar junctions, here however valid regimes strong electrostatic confinements.