作者: Zhankun Weng , Aimin Liu , Yongchang Sang , Jiquan Zhang , Zengquan Hu
DOI: 10.1007/S10934-008-9252-5
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摘要: We present porous InP formation in neutral NaCl solution. N-type wafers were etched at linear sweep voltammetry and constant potential, respectively. The results showed that the potential 7.0–8.5 V is suitable for forming regular pores of InP. reaction eight holes are used to dissolve one molecule was confirmed by our experimental results. crystallographically oriented formed suggested be synergic effect between surface state curvature. current-line ascribed