Nanoscale materials modification via low-energy reactive plasmas
作者： P.A. Kraus , Thai Cheng Chua , C.S. Olsen , T.M. Bauer
DOI: 10.1109/NANO.2004.1392239
关键词:
摘要: Materials modification of thin films and nanoparticles through the use reactive plasmas is discussed. Pulsed radio-frequency nitrogen have been well characterized measurement ion energy distribution in plasma. The low-energy are successfully used for incorporation into ultrathin MOSFET gate dielectrics, where dose control profile both critical. low-energy, pulsed other applications composition morphology need to be controlled at nanometer scale considered.
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