Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon
作者： W. R. Thurber , R. L. Mattis , Y. M. Liu , J. J. Filliben
DOI: 10.1149/1.2129394
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摘要: … of 296~ (23~ and 300~ For dopant densities less than 10 s cm -8, … For more heavily doped material, boron densities were … ments on boron-doped silicon with dopant densities in the …
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