Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector

摘要: Abstract Molybdenum disulphide (MoS2), a member of the transition metal dichalcogenides family has shown excellent optoelectronic properties with direct or indirect bandgaps in visible range as well good absorption its 2-dimensional (2D) form. In this work, polycrystalline MoS2 thin film is fabricated by radio frequency magnetron sputtering. X-ray diffraction (XRD) analysis sample reveals two hexagonal structured peaks along (100) and (110) planes, while energy-dispersive (EDX) spectroscopy confirms non-stoichiometric thickness 300 nm. Raman shifts are observed at E12g A1g phonon modes, located 374.37 cm−1 407.75 cm−1 respectively. A sandwiched heterojunction photodetector SLG/n-MoS2/p-Si structure illuminated violet light 441 nm. The device exhibits significant various laser powers 10 V bias voltage. maximum value photocurrent calculated 0.79 μA, responsivity 10.4 mAW−1 detectivity 6.74 × 109 Jones an intensity 0.004 mW/cm2. These results highlight adaptability current technique that will help realize large-scale production allow for development advanced devices.