The effect of Ti+ ion implantation on the anatase-rutile phase transformation and resistive switching properties of TiO 2 thin films

摘要: We investigate here the structural phase transformation and electrical resistive switching properties of TiO 2 thin films (80 nm) after their self-ion implantation with 50 keV Ti + ions at several fluences. UV-Raman, grazing incidence x-ray diffraction (GIXRD), transmission electron microscopy, photoelectron spectroscopy, atomic force microscopy techniques have been utilized to modifications in films. Both, as-grown ion implanted, display mixed phases rutile (R) anatase (A). Surprisingly, however, a transition from A R is observed critical fluence, where some content transforms into rutile. This increases additional fluence. The fluence found by GIXRD slightly smaller ( 1 × 10 13 ions/cm 2) than UV-Raman 14 ions/cm 2), indicating first initiation probably bulk. All contain nanocrystalline form also seems take place via aggregation nanoparticles. Thin show presence oxygen vacancies (O V) 3 +, whose number grows These O V as well thermal spikes created during are crucial for A-R transition. After highest bipolar behavior. development conducting filaments, formed migration many generated implantation, can be responsible this behavior.We t...