Tunable infrared detector with narrow bandwidth

摘要: An infrared detector with narrow band tunable response. The is cosed of four layers epitaxially grown material that doped for selective wavelength absorption. uppermost layer has a thickness much larger than the penetration depth short radiation or diffusion length photo generated carriers near surface. upper heavily N-doped over P-doped layer. cut-on edge determined by amount doping in By applying reverse bias to this N-P junction, cut-off absorption can be shifted longer wavelengths.