摘要: This chapter is concerned with growth of single crystals from melts semiconductors. In the case compound semiconductors, these are stoichiometric or nearly so. The production semiconductors in single-crystal form a core requirement almost all semiconductor device technology. As consequence, whole field crystal technology strongly driven and sensitive to commercial pressures related efficiency, quality, etc. Thus fuller understanding evolution particular requires an appreciation background subject. Only cursory consideration can be given aspects this chapter. Here we primarily principles concepts underlying melt.
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R. J. Malik, III-V semiconductor materials and devices North-Holland , Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co.. ,(1989)
E. P. A. Metz, R. C. Miller, R. Mazelsky, A Technique for Pulling Single Crystals of Volatile Materials Journal of Applied Physics. ,vol. 33, pp. 2016- 2017 ,(1962) , 10.1063/1.1728885
J.B. Mullin, R.J. Heritage, C.H. Holliday, B.W. Straughan, Liquid encapsulation crystal pulling at high pressures Journal of Crystal Growth. ,vol. 3, pp. 281- 285 ,(1968) , 10.1016/0022-0248(68)90154-1
K. F. Hulme, J. B. Mullin, Facets and anomalous solute distributions in indium-antimonide crystals Philosophical Magazine. ,vol. 4, pp. 1286- 1288 ,(1959) , 10.1080/14786435908235834
J.B. Mullin, B.W. Straughan, W.S. Brickell, Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals Journal of Physics and Chemistry of Solids. ,vol. 26, pp. 782- 784 ,(1965) , 10.1016/0022-3697(65)90034-X
M J Russell, R K Moore, N J Tomlinson, Royal Signals and Radar Establishment ,(1983)
J.B. MULLIN, CHAPTER 1 - Melt-Growth of Iii–V Compounds by the Liquid Encapsulation and Horizontal Growth Techniques Materials Processing: Theory and Practices. ,vol. 7, pp. 1- 72 ,(1989) , 10.1016/B978-0-444-87074-2.50008-9
D.T.J. Hurle, Constitutional supercooling during crystal growth from stirred melts—I Solid-State Electronics. ,vol. 3, pp. 37- 44 ,(1961) , 10.1016/0038-1101(61)90078-8