High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2∕HfO2–Al2O3nanolaminate∕Al2O3
作者： Shi-Jin Ding , Min Zhang , Wei Chen , David Wei Zhang , Li-Kang Wang
DOI: 10.1063/1.2168227
关键词:
摘要: We demonstrate a program-erasable metal-insulator-silicon capacitor with dielectric structure of SiO2∕HfO2–Al2O3 nanolaminate (HAN)∕Al2O3. The memory exhibits high capacitance density 4.5fF∕μm2, large window 1.45 V in the case +12Vprogram∕−12Verase for 5 ms, nearly symmetrical positive and negative flatband voltages under program/erase operations same magnitudes voltage time, no erase saturation. This is attributed to fact that introduction atomic-layer-deposited high-dielectric-constant HAN∕Al2O3 layers increases electric field across tunnel oxide reduces blocking layer, hence, preventing effectively Fowler-Nordheim tunneling current through layer. Additionally, we find HAN promising charge storage layer sufficient trapping centers electrons holes.
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