Method to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flash
作者： Hung-Der Su , Chia-Ta Hsieh , Yai-Fen Lin , Di-Son Kuo , Jong Chen
DOI:
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摘要: A method is provided for forming a stacked-gate flash memory cell having shallow trench isolation with high-step of oxide and high lateral coupling. This accomplished by first depositing an unconventionally or thick layer nitride then (STI) through the into substrate, filling STI oxide, removing thus leaving behind deep opening about filled STI, conformally polysilicon to form floating gate, interpoly over second control gate finally self-aligned source invention. also
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