Dynamic segregation of metallic impurities at SiO2/Si interfaces
作者： A De Luca , A Portavoce , M Texier , N Burle , B Pichaud
DOI: 10.1088/1742-6596/471/1/012029
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摘要: The behaviour of two metallic impurities, iron and tungsten, during oxidation silicon wafers has been investigated using transmission electron microscopy atom probe tomography. Metallic contamination introduced by implantation 54Fe at 65 keV 186W 150 keV, with a dose 1015 at/cm2. Oxidation Fe-contaminated Si wafer results in the precipitation as β-FeSi2 SiO2/Si interface. presence these precipitates hinders front which forms pyramidal defects. Further leads to iron-rich cluster formation SiO2 layer, surrounding pyramids. Dry tungsten-contaminated is characterised nanometric spherical layer. size density versus depth follow as-implanted W concentration profile.
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