Bias Voltage Dependence of Tunneling Anisotropic Magnetoresistance in Magnetic Tunnel Junctions with MgO and Al 2 O 3 Tunnel Barriers
作者： Li Gao , Xin Jiang , See-Hun Yang , J. D. Burton , Evgeny Y. Tsymbal
DOI: 10.1103/PHYSREVLETT.99.226602
关键词:
摘要: Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane sufficiently large magnetic fields that nearly parallel one another. A complex angular dependence of tunneling resistance found twofold and fourfold components vary strongly bias voltage. Distinctly different TAMR behaviors obtained for devices formed highly textured crystalline MgO(001) amorphous ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ barriers. tight-binding model shows a can be explained by presence an interface resonant state affects transmission contributing states through spin-orbit interaction.
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