Fabrication and Characterizations of Bi2Te3 Based Topological Insulator Nanomaterials
作者： Z. H. Wang , Xuan P. A. Gao , Z. D. Zhang
DOI: 10.1007/978-3-319-50824-5_15
关键词:
摘要: In this manuscript, recent experimental research progresses in topological insulators Bi2Se3 and Bi2Te3 based nanostructures are presented, with a focus on nanoflakes, nanoplates, nanosheets, nanowires, thin films of insulator materials. Among the various synthesis methods, chemical vapor deposition (CVD) method is described here as an example for nanomaterials. The Raman spectroscopy electrical transport characterizations discussed few different types insulators, such binary/ternary/quaternary compound elementally-doped films.
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