Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
作者： H. Marchand , X. H. Wu , J. P. Ibbetson , P. T. Fini , P. Kozodoy
DOI: 10.1063/1.121988
关键词:
摘要: Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown (LEO GaN) has a rectangular cross section with smooth (0001) {1120} facets. density of mixed-character pure edge threading dislocations the LEO (<5×106 cm−2) reduced at least 3–4 orders magnitude from that bulk (∼1010 cm−2). A small number line directions parallel to basal plane are generated between bulk-like regions as well intersection adjacent merging stripes. most likely accommodate misorientation single-crystal
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