Room-Temperature Ferromagnetism in Cu Doped GaN Nanowires

摘要: We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10−100 nm tens micrometers, respectively. saturation magnetic moments measured to be higher than 0.86 μB/Cu at 300 K, Curie temperatures far above room temperature. Anomalous X-ray scattering diffraction measurement make it clear that atoms substitute Ga sites, they largely take part wurtzite network host GaN. absorption circular dichroism spectra L2,3 edges show has local moment electronic configuration is mainly 3d9 but mixed with a small portion trivalent component. It seems ionocovalent bonding nature 3d orbital surrounding semiconductor medium makes atom electron moments. These outcomes suggest system room-temperature ferromagnetic semicon...