Manufacturing method of semiconductor device and semiconductor device
作者： Ueno Katsunori , Takashima Shinya
DOI:
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摘要: Provided is a manufacturing method of semiconductor device including vertical MOSFET having planar gate. The includes forming n-type gallium nitride layer on monocrystalline substrate, and an impurity-implanted region that contains impurities at uniform concentration in direction parallel to main surface the by ion-implanting into layer, where include least one type selected from among magnesium, beryllium, calcium zinc. Here, part serves as channel MOSFET.
lens.org 参考文章(17)
Takao Nakamura, Shin Hashimoto, Hiroshi Amano, Method of forming group iii nitride semiconductor, method of fabricating semiconductor device, group iii nitride semiconductor device, method of performing thermal treatment ,(2013)
Mark Van Dal, Epitaxially Growing III-V Contact Plugs for MOSFETs ,(2013)
Lee McCarthy, Nicholas Fichtenbaum, Umesh Mishra, High voltage iii-nitride semiconductor devices ,(2009)
Toshihide Kikkawa, Kenji Imanishi, Compound semiconductor device and manufacturing method thereof ,(2009)
Tohru Oka, Yukihisa Ueno, Tsutomu Ina, Kazuya Hasegawa, Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV Applied Physics Express. ,vol. 7, pp. 021002- ,(2014) , 10.7567/APEX.7.021002
Shiro Akamatsu, Yuji Ohmaki, Field effect transistor including a group III-V compound semiconductor layer ,(2008)
Naoki Kaneda, Tomoyoshi Mishima, Tadayoshi Tsuchiya, Gallium nitride rectifying device ,(2012)
Nicholas Fichtenbaum, Brian L. Swenson, Stacia Keller, Buffer layer structures suited for iii-nitride devices with foreign substrates ,(2012)
Seikoh Yoshida, Masayuki Sasaki, GaN-based field effect transistor of a normally-off type ,(2004)
Noriyuki Iwamuro, Gallium nitride semiconductor device and manufacturing method thereof ,(2008)