Physics-based models of power semiconductor devices for the circuit simulator SPICE

作者: R. Kraus , P. Turkes , J. Sigg

DOI: 10.1109/PESC.1998.703414

关键词:

摘要: … and if the decrease of w with time is fast (large value of dxjdt). A smaller Td resalts in a … a standard Spice MOSFET model is used, for the bipolar part, however, a standard Spice model is …

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