Effect of interfacial layers on dielectric properties in very thin SrBi2Ta2O9 capacitors
作者： Bum-Ki Moon , Chiharu Isobe , Katsuyuki Hironaka , Shinichi Hishikawa
DOI: 10.1063/1.1368158
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摘要: The effect of interfacial layers on the dielectric properties in very thin SrBi2Ta2O9 (SBT) capacitors has been investigated using static measurements. Total permittivity (et) decreased as film thickness was reduced both Pt/SBT/Pt and Ir/SBT/Pt capacitors. contribution capacitance (Cint) bulk to total indicates that Cint structure lower than structure, while (eb) essentially same. dispersion all followed power law, capacitor showed a larger Cint. These results suggest is preferred for obtaining high performance with less properties.
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