Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition
作者： Ramsey Hazbun , John Hart , Ryan Hickey , Ayana Ghosh , Nalin Fernando
DOI: 10.1016/J.JCRYSGRO.2016.03.018
关键词:
摘要: Abstract The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical tool. growth rates and morphology the Si epitaxial layers over range temperatures pressures are presented. were characterized transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, secondary ion mass spectrometry. Based on this characterization, high quality single crystal epitaxy was observed. Tetrasilane found to produce higher relative lower order silanes, with ability deposit crystalline at low ( T =400 °C), significant amorphous reactivity measured 325 °C, indicating suitability temperature such SiGeSn alloys.
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